标题
Phonon-limited mobility inn-type single-layer MoS2from first principles
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 85, Issue 11, Pages -
出版商
American Physical Society (APS)
发表日期
2012-03-24
DOI
10.1103/physrevb.85.115317
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Low-temperature photocarrier dynamics in monolayer MoS2
- (2011) T. Korn et al. APPLIED PHYSICS LETTERS
- A Comparative Study of Lattice Dynamics of Three- and Two-Dimensional MoS2
- (2011) C. Ataca et al. Journal of Physical Chemistry C
- Functionalization of Single-Layer MoS2 Honeycomb Structures
- (2011) C. Ataca et al. Journal of Physical Chemistry C
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition
- (2011) J. Heo et al. PHYSICAL REVIEW B
- Band-gap transition induced by interlayer van der Waals interaction in MoS2
- (2011) S. W. Han et al. PHYSICAL REVIEW B
- Phonons in single-layer and few-layer MoS2and WS2
- (2011) A. Molina-Sánchez et al. PHYSICAL REVIEW B
- New directions in science and technology: two-dimensional crystals
- (2011) A H Castro Neto et al. REPORTS ON PROGRESS IN PHYSICS
- Electronic transport in two-dimensional graphene
- (2011) S. Das Sarma et al. REVIEWS OF MODERN PHYSICS
- Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
- (2010) Changgu Lee et al. ACS Nano
- A mixed-space approach to first-principles calculations of phonon frequencies for polar materials
- (2010) Y Wang et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Electronic structure calculations with GPAW: a real-space implementation of the projector augmented-wave method
- (2010) J Enkovaara et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Emerging Photoluminescence in Monolayer MoS2
- (2010) Andrea Splendiani et al. NANO LETTERS
- Theoretical intrinsic lifetime limit of shallow donor states in silicon
- (2010) Valeriy Tyuterev et al. PHYSICAL REVIEW B
- Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors
- (2010) Aniruddha Konar et al. PHYSICAL REVIEW B
- First-principles analysis of electron-phonon interactions in graphene
- (2010) K. M. Borysenko et al. PHYSICAL REVIEW B
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- PHON: A program to calculate phonons using the small displacement method
- (2009) Dario Alfè COMPUTER PHYSICS COMMUNICATIONS
- Electronic structure of two-dimensional crystals fromab initiotheory
- (2009) S. Lebègue et al. PHYSICAL REVIEW B
- Localized atomic basis set in the projector augmented wave method
- (2009) A. H. Larsen et al. PHYSICAL REVIEW B
- The electronic properties of graphene
- (2009) A. H. Castro Neto et al. REVIEWS OF MODERN PHYSICS
- Intrinsic and extrinsic performance limits of graphene devices on SiO2
- (2008) Jian-Hao Chen et al. Nature Nanotechnology
- Limit to two-dimensional mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 million
- (2008) E. H. Hwang et al. PHYSICAL REVIEW B
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