Going ballistic: Graphene hot electron transistors

标题

作者

关键词

Graphene, Hot electron transistors graphene base transistor, GBT, HBT, Ballistic transport, NEGF

出版物

SOLID STATE COMMUNICATIONS

Volume 224, Issue -, Pages 64-75

出版商

Elsevier BV

发表日期

2015-08-29

DOI

10.1016/j.ssc.2015.08.012

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