4.8 Article

Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter

期刊

NANO LETTERS
卷 17, 期 5, 页码 3089-3096

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b00451

关键词

Hot electron transistor; graphene; GaN; WSe2; van der Waals heterostructure; tunneling; transition metal dichalcogenides

资金

  1. ARO Grant [W911NF-14-2-0071]
  2. ONR PECASE program
  3. STC Center for Integrated Quantum Materials
  4. NSF [DMR-1231319]
  5. AFOSR FATE MURI [FA9550-15-1-0514]

向作者/读者索取更多资源

Single layer graphene is an ideal material for the base layer of hot electron transistors (HETs) for potential terahertz (THz) applications. The ultrathin body and exceptionally long mean free path maximizes the probability for ballistic transport across the base of the HET. We demonstrate for the first time the operation of a high-performance HET using a graphene/WSe2 van der Waals (vdW) heterostructure as a base-collector barrier. The resulting device with a GaN/AlN heterojunction as emitter, exhibits a current density of 50 A/cm(2), direct current gain above 3 and 75% injection efficiency, which are record values among graphene-base HETs. These results not only provide a scheme to overcome the limitations of graphene-base HETs toward THz operation but are also the first demonstration of a GaN/vdW heterostructure in HETs, revealing the potential for novel electronic and optoelectronic applications.

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