Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

出版年份 2016 全文链接

标题

Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

作者

关键词

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出版物

ACS Nano

Volume 10, Issue 2, Pages 2128-2137

出版商

American Chemical Society (ACS)

发表日期

2016-01-21

DOI

10.1021/acsnano.5b06529

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