Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

(2012) M. Portail et al.   JOURNAL OF CRYSTAL GROWTH

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

(2011) F. Speck et al.   APPLIED PHYSICS LETTERS

Graphene Epitaxy by Chemical Vapor Deposition on SiC

(2011) W. Strupinski et al.   NANO LETTERS

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

(2010) A. Michon et al.   APPLIED PHYSICS LETTERS

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

(2010) E. Moreau et al.   APPLIED PHYSICS LETTERS

AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H–SiC

(2010) Gyan Prakash et al.   CARBON

Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)

(2010) Jeonghyun Hwang et al.   JOURNAL OF CRYSTAL GROWTH

Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation

(2009) A. Al-Temimy et al.   APPLIED PHYSICS LETTERS

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

(2009) Konstantin V. Emtsev et al.   NATURE MATERIALS

Graphene growth by molecular beam epitaxy using a solid carbon source

(2009) E. Moreau et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Graphene on the C-terminated SiC(0001¯)surface: Anab initiostudy

(2009) L. Magaud et al.   PHYSICAL REVIEW B

Insights into few-layer epitaxial graphene growth on4H-SiC(0001¯)substrates from STM studies

(2009) Laura B. Biedermann et al.   PHYSICAL REVIEW B

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

(2009) C. Riedl et al.   PHYSICAL REVIEW LETTERS

Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

(2008) B.L. VanMil et al.   JOURNAL OF CRYSTAL GROWTH

Rotational disorder in few-layer graphene films on6H−SiC(000−1): A scanning tunneling microscopy study

(2008) François Varchon et al.   PHYSICAL REVIEW B

Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

(2008) K. V. Emtsev et al.   PHYSICAL REVIEW B

Why Multilayer Graphene on4H−SiC(0001¯)Behaves Like a Single Sheet of Graphene

(2008) J. Hass et al.   PHYSICAL REVIEW LETTERS