Vertical MoS 2 / h BN/MoS 2 interlayer tunneling field effect transistor

出版年份 2016 全文链接

标题

作者

关键词

Vertical interlayer MoS, 2, FET, h, BN, Tunnel FET

出版物

SOLID-STATE ELECTRONICS

Volume 126, Issue -, Pages 96-103

出版商

Elsevier BV

发表日期

2016-09-19

DOI

10.1016/j.sse.2016.09.008

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