标题
Design of a Controllable Redox‐Diffusive Threshold Switching Memristor
作者
关键词
-
出版物
Advanced Electronic Materials
Volume -, Issue -, Pages 2000695
出版商
Wiley
发表日期
2020-10-07
DOI
10.1002/aelm.202000695
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Uncovering the Indium Filament Revolution in Transparent Bipolar ITO/SiOx/ITO Resistive Switching Memories
- (2020) Kai Qian et al. ACS Applied Materials & Interfaces
- Engineering of defects in resistive random access memory devices
- (2020) Writam Banerjee et al. JOURNAL OF APPLIED PHYSICS
- Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold Switching
- (2020) Won Hee Jeong et al. Nanoscale Research Letters
- Neuromorphic nanoelectronic materials
- (2020) Vinod K. Sangwan et al. Nature Nanotechnology
- A comprehensive review on emerging artificial neuromorphic devices
- (2020) Jiadi Zhu et al. Applied Physics Reviews
- Resistive switching materials for information processing
- (2020) Zhongrui Wang et al. Nature Reviews Materials
- Enhancement of DC/AC resistive switching performance in AlOx memristor by two-technique bilayer approach
- (2020) Xiao Di Huang et al. APPLIED PHYSICS LETTERS
- Performance Improvement of Conductive Bridging Random Access Memory by Electrode Alloying
- (2020) Leilei Qiao et al. Journal of Physical Chemistry C
- Bioinspired bio-voltage memristors
- (2020) Tianda Fu et al. Nature Communications
- Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics
- (2020) Alexey Mikhaylov et al. Frontiers in Neuroscience
- Ultralow operation voltages of a transparent memristor based on bilayer ITO
- (2020) Yuchen Wang et al. APPLIED PHYSICS LETTERS
- Improvement in Threshold Switching Performance Using Al₂O₃ Interfacial Layer in Ag/Al₂O₃/SiOₓ/W Cross-Point Platform
- (2020) Subhranu Samanta et al. IEEE ELECTRON DEVICE LETTERS
- 2D MoS2-Based Threshold Switching Memristor for Artificial Neuron
- (2020) Durjoy Dev et al. IEEE ELECTRON DEVICE LETTERS
- Alloying conducting channels for reliable neuromorphic computing
- (2020) Hanwool Yeon et al. Nature Nanotechnology
- Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament
- (2020) Writam Banerjee et al. Advanced Electronic Materials
- Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing
- (2020) Hao‐Yang Li et al. Advanced Electronic Materials
- Challenges and Applications of Emerging Nonvolatile Memory Devices
- (2020) Writam Banerjee Electronics
- Electric field control of phase transition and tunable resistive switching in SrFeO2.5
- (2019) Muhammad Shahrukh Saleem et al. ACS Applied Materials & Interfaces
- Performance-Enhancing Selector via Symmetrical Multilayer Design
- (2019) Yiming Sun et al. ADVANCED FUNCTIONAL MATERIALS
- Various Threshold Switching Devices for Integrate and Fire Neuron Applications
- (2019) Donguk Lee et al. Advanced Electronic Materials
- Silver-Adapted Diffusive Memristor Based on Organic Nitrogen-Doped Graphene Oxide Quantum Dots (N-GOQDs) for Artificial Biosynapse Applications
- (2019) Andrey Sergeevich Sokolov et al. ADVANCED FUNCTIONAL MATERIALS
- Modulating metallic conductive filaments via bilayer oxides in resistive switching memory
- (2019) Y. M. Sun et al. APPLIED PHYSICS LETTERS
- A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications
- (2019) Qilin Hua et al. Advanced Science
- Physically Transient True Random Number Generators Based on Paired Threshold Switches Enabling Monte Carlo Method Applications
- (2019) Bingjie Dang et al. IEEE ELECTRON DEVICE LETTERS
- Self-selective van der Waals heterostructures for large scale memory array
- (2019) Linfeng Sun et al. Nature Communications
- Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling
- (2019) Wei Wang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Fully Printed Flexible MoS 2 Memristive Artificial Synapse with Femtojoule Switching Energy
- (2019) Xuewei Feng et al. Advanced Electronic Materials
- Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions
- (2019) Writam Banerjee et al. Advanced Electronic Materials
- Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors
- (2019) Benjamin Grisafe et al. IEEE ELECTRON DEVICE LETTERS
- Light-activated electroforming in ITO/ZnO/p-Si resistive switching devices
- (2019) O. Blázquez et al. APPLIED PHYSICS LETTERS
- Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application
- (2019) Xiaolong Zhao et al. NANOTECHNOLOGY
- Super Nonlinear Electrodeposition–Diffusion-Controlled Thin-Film Selector
- (2018) Xinglong Ji et al. ACS Applied Materials & Interfaces
- Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity
- (2018) Jun Yin et al. ADVANCED FUNCTIONAL MATERIALS
- Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch
- (2018) Ming Wang et al. ADVANCED MATERIALS
- Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
- (2018) Xiaolong Zhao et al. ADVANCED MATERIALS
- CMOS compatible low-power volatile atomic switch for steep-slope FET devices
- (2018) Seokjae Lim et al. APPLIED PHYSICS LETTERS
- Dual-Layer Selector With Excellent Performance for Cross-Point Memory Applications
- (2018) Qi Lin et al. IEEE ELECTRON DEVICE LETTERS
- An Artificial Neuron Based on a Threshold Switching Memristor
- (2018) Xumeng Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device
- (2018) Yiming Sun et al. Journal of Physical Chemistry C
- Flexible cation-based threshold selector for resistive switching memory integration
- (2018) Xiaolong Zhao et al. Science China-Information Sciences
- An artificial nociceptor based on a diffusive memristor
- (2018) Jung Ho Yoon et al. Nature Communications
- Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
- (2018) Can Li et al. Nature Communications
- Solution-Processed Flexible Threshold Switch Devices
- (2018) Youngjun Park et al. Advanced Electronic Materials
- Threshold Switching Behavior of Ag-SiTe-Based Selector Device and Annealing Effect on its Characteristics
- (2018) Bing Song et al. IEEE Journal of the Electron Devices Society
- Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
- (2018) Yi-Ting Tseng et al. APPLIED PHYSICS LETTERS
- Nanoscale diffusive memristor crossbars as physical unclonable functions
- (2018) R. Zhang et al. Nanoscale
- TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
- (2018) Kai-Jhih Gan et al. SURFACE & COATINGS TECHNOLOGY
- Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices
- (2018) Yingtao Li et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Realizing Bidirectional Threshold Switching in Ag/Ta2O5/Pt Diffusive Devices for Selector Applications
- (2018) Yaoyuan Wang et al. JOURNAL OF ELECTRONIC MATERIALS
- Self-Modulating Interfacial Cation Migration Induced Threshold Switching in Bilayer Oxide Memristive Device
- (2018) Jun Yin et al. Journal of Physical Chemistry C
- Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices
- (2017) Jeonghwan Song et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array
- (2017) Qing Luo et al. Nano Research
- A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
- (2017) Yoeri van de Burgt et al. NATURE MATERIALS
- Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials
- (2017) Yu Li et al. Small
- Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer
- (2017) Xiaolong Zhao et al. Small
- A novel true random number generator based on a stochastic diffusive memristor
- (2017) Hao Jiang et al. Nature Communications
- Excellent selector performance in engineered Ag/ZrO2:Ag/Pt structure for high-density bipolar RRAM applications
- (2017) Chao Wang et al. AIP Advances
- Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory
- (2016) Sen Liu et al. ADVANCED MATERIALS
- Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device
- (2016) Jeonghwan Song et al. IEEE ELECTRON DEVICE LETTERS
- Nanoscale electrochemistry using dielectric thin films as solid electrolytes
- (2016) Ilia Valov et al. Nanoscale
- Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
- (2016) Zhongrui Wang et al. NATURE MATERIALS
- Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application
- (2015) Jeonghwan Song et al. APPLIED PHYSICS LETTERS
- Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector
- (2015) Sung Hyun Jo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices
- (2015) Yu. Matveyev et al. JOURNAL OF APPLIED PHYSICS
- Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application
- (2015) Shuang Gao et al. Nanoscale
- Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system
- (2015) Shuang Gao et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- A steep-slope transistor based on abrupt electronic phase transition
- (2015) Nikhil Shukla et al. Nature Communications
- Exploring the Design Space for Crossbar Arrays Built With Mixed-Ionic-Electronic-Conduction (MIEC) Access Devices
- (2015) Pritish Narayanan et al. IEEE Journal of the Electron Devices Society
- Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
- (2014) Haitao Sun et al. ADVANCED FUNCTIONAL MATERIALS
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
- (2014) Yuchao Yang et al. Nature Communications
- Thermoelectric Seebeck effect in oxide-based resistive switching memory
- (2014) Ming Wang et al. Nature Communications
- High-Performance and Low-Power Rewritable SiOx1 kbit One Diode-One Resistor Crossbar Memory Array
- (2013) Gunuk Wang et al. ADVANCED MATERIALS
- Formation process of conducting filament in planar organic resistive memory
- (2013) S. Gao et al. APPLIED PHYSICS LETTERS
- Fully CMOS-Compatible 1T1R Integration of Vertical Nanopillar GAA Transistor and Oxide-Based RRAM Cell for High-Density Nonvolatile Memory Application
- (2013) Z. Fang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory
- (2013) Yahua Peng et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Nanoscale resistive switching devices: mechanisms and modeling
- (2013) Yuchao Yang et al. Nanoscale
- Stochastic memristive devices for computing and neuromorphic applications
- (2013) Siddharth Gaba et al. Nanoscale
- Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
- (2012) Zhong Qiang Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
- (2012) Qi Liu et al. ADVANCED MATERIALS
- Volatile resistive switching in Cu/TaOx/δ-Cu/Pt devices
- (2012) Tong Liu et al. APPLIED PHYSICS LETTERS
- A Contact-Resistive Random-Access-Memory-Based True Random Number Generator
- (2012) Chien-Yuan Huang et al. IEEE ELECTRON DEVICE LETTERS
- Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM
- (2012) Yang Yin Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer
- (2012) Guangsheng Tang et al. Nanoscale
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Science and Engineering Beyond Moore's Law
- (2012) R. K. Cavin et al. PROCEEDINGS OF THE IEEE
- Towards artificial neurons and synapses: a materials point of view
- (2012) Doo Seok Jeong et al. RSC Advances
- Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks
- (2011) Yoon Cheol Bae et al. ADVANCED FUNCTIONAL MATERIALS
- Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
- (2011) L. Goux et al. APPLIED PHYSICS LETTERS
- $\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity
- (2011) Z. Fang et al. IEEE ELECTRON DEVICE LETTERS
- Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors
- (2011) Hee-Dong Kim et al. IEEE ELECTRON DEVICE LETTERS
- Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications
- (2011) Myungwoo Son et al. IEEE ELECTRON DEVICE LETTERS
- Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications
- (2011) Jiun-Jia Huang et al. IEEE ELECTRON DEVICE LETTERS
- An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
- (2011) Shimeng Yu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Electrochemical metallization memories—fundamentals, applications, prospects
- (2011) Ilia Valov et al. NANOTECHNOLOGY
- Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
- (2011) Takeo Ohno et al. NATURE MATERIALS
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
- (2010) C. Chen et al. APPLIED PHYSICS LETTERS
- Highly Stable Radiation-Hardened Resistive-Switching Memory
- (2010) Yan Wang et al. IEEE ELECTRON DEVICE LETTERS
- Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- (2010) Sung Hyun Jo et al. NANO LETTERS
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices
- (2009) Byungjin Cho et al. ADVANCED MATERIALS
- Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
- (2009) C. Schindler et al. APPLIED PHYSICS LETTERS
- An Organic-Based Diode–Memory Device With Rectifying Property for Crossbar Memory Array Applications
- (2009) E. Yeow Hwee Teo et al. IEEE ELECTRON DEVICE LETTERS
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
Become a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get StartedAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started