2D MoS2-Based Threshold Switching Memristor for Artificial Neuron

标题

作者

关键词

出版物

IEEE ELECTRON DEVICE LETTERS

Volume 41, Issue 6, Pages 936-939

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2020-04-17

DOI

10.1109/led.2020.2988247

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IEEE ELECTRON DEVICE LETTERS

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