4.6 Article

An Organic-Based Diode-Memory Device With Rectifying Property for Crossbar Memory Array Applications

期刊

IEEE ELECTRON DEVICE LETTERS
卷 30, 期 5, 页码 487-489

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2017387

关键词

Memory array; polymer diode; polymer memory; rectifying polymer memory

资金

  1. Agency for Science, Technology and Research (A*STAR) of Singapore [R-279-000-207-305]

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An organic-based diode-memory device that has a bistable memory function and a high rectification ratio has been studied. The diode-memory device is fabricated by incorporating an organic-based diode component in series with a polymer memory component. The organic-based diode-memory device performs well as a reliable rectifying memory device, achieving an excellent on/off current ratio of 10(6) and a high rectification ratio of 10(3). The conduction models are also fitted to study the proposed conductivity mechanism of the rectifying memory device. The demonstrated organic-based diode-memory device is very promising for use in a passive matrix crossbar polymer memory array.

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