Modulating metallic conductive filaments via bilayer oxides in resistive switching memory
出版年份 2019 全文链接
标题
Modulating metallic conductive filaments via bilayer oxides in resistive switching memory
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 114, Issue 19, Pages 193502
出版商
AIP Publishing
发表日期
2019-05-17
DOI
10.1063/1.5098382
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Performance-Enhancing Selector via Symmetrical Multilayer Design
- (2019) Yiming Sun et al. ADVANCED FUNCTIONAL MATERIALS
- Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory
- (2019) Xiaolong Zhao et al. IEEE ELECTRON DEVICE LETTERS
- Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch
- (2018) Ming Wang et al. ADVANCED MATERIALS
- The Nature of Lithium-Ion Transport in Low Power Consumption LiFePO4 Resistive Memory with Graphite as Electrode
- (2018) Lei Zhang et al. Physica Status Solidi-Rapid Research Letters
- TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
- (2018) Kai-Jhih Gan et al. SURFACE & COATINGS TECHNOLOGY
- Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices
- (2018) Yingtao Li et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators
- (2016) Byoung Kuk You et al. ACS Nano
- Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory
- (2016) Sen Liu et al. ADVANCED MATERIALS
- Nanoscale electrochemistry using dielectric thin films as solid electrolytes
- (2016) Ilia Valov et al. Nanoscale
- Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
- (2016) Zhongrui Wang et al. NATURE MATERIALS
- Controllable Formation of Nanofilaments in Resistive Memories via Tip-Enhanced Electric Fields
- (2016) Keun-Young Shin et al. Advanced Electronic Materials
- Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices
- (2015) Umberto Celano et al. Journal of Physical Chemistry Letters
- Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer
- (2014) Byoung Kuk You et al. ACS Nano
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
- (2014) Yuchao Yang et al. Nature Communications
- Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots
- (2013) Jung Ho Yoon et al. ADVANCED MATERIALS
- Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer
- (2013) W. J. Ma et al. APPLIED PHYSICS LETTERS
- Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
- (2012) Qi Liu et al. ADVANCED MATERIALS
- Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments
- (2012) Wootae Lee et al. APPLIED PHYSICS LETTERS
- Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices
- (2012) Shuang Gao et al. Journal of Physical Chemistry C
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- Electrical memory devices based on inorganic/organic nanocomposites
- (2012) Tae Whan Kim et al. NPG Asia Materials
- Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks
- (2011) Yoon Cheol Bae et al. ADVANCED FUNCTIONAL MATERIALS
- Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
- (2011) Feng Miao et al. ADVANCED MATERIALS
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- Electrochemical metallization memories—fundamentals, applications, prospects
- (2011) Ilia Valov et al. NANOTECHNOLOGY
- Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
- (2010) Qi Liu et al. ACS Nano
- Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions
- (2009) Young Ho Do et al. APPLIED PHYSICS LETTERS
- Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
- (2009) C. Schindler et al. APPLIED PHYSICS LETTERS
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
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