期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 12, 页码 1470-1472出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2081340
关键词
Conductive filament; radiation; resistive random access memory (RRAM); gamma ray
资金
- National Basic Research Program of China (973 Program) [2008CB925002, 2010CB934200]
- National Natural Science Foundation of China [60825403, 50972160]
- Hi-Tech Research and Development Program of China (863 Program) [2009AA03Z306]
In this letter, the resistive random access memory (RRAM) with metal-insulator-metal structure is investigated for the first time under radiation conditions. The fabricated Cu-doped HfO2-based RRAM devices are found to have immunity from Co-60 gamma ray of various dose ranges. The basic RRAM parameters such as high-resistance state, low-resistance state, SET/RESET voltages, operation speed, and endurance have nearly no degradation after Co-60 gamma ray treatment with a total dose as high as 3.6 x 10(5) rad (Si). Furthermore, a retention characteristic of 10(5) s is also achieved during radiation. The highly stable characteristics of Cu-doped HfO2-based RRAM devices under radiation provide RRAM a great potential for aerospace and nuclear applications.
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