Emerging Applications for High K Materials in VLSI Technology

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-$\kappa$ Gate Dielectric

(2014) Chun Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer

(2013) Sanghoon Lee et al.   APPLIED PHYSICS LETTERS

Step tunneling enhanced asymmetry in asymmetric electrode metal-insulator-insulator-metal tunnel diodes

(2013) N. Alimardani et al.   APPLIED PHYSICS LETTERS

Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0.56Sb0.44 confinement layers

(2013) Cheng-Ying Huang et al.   APPLIED PHYSICS LETTERS

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

(2013) Varistha Chobpattana et al.   APPLIED PHYSICS LETTERS

Carbon-nanostructures coated/decorated by atomic layer deposition: Growth and applications

(2013) Catherine Marichy et al.   COORDINATION CHEMISTRY REVIEWS

Precursors as enablers of ALD technology: Contributions from University of Helsinki

(2013) Timo Hatanpää et al.   COORDINATION CHEMISTRY REVIEWS

CVD-derived Hf-based High-k Gate Dielectrics

(2013) Gang He et al.   CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES

Oxygen-Deficient Oxide Growth by Subliming the Oxide Source Material: The Cause of Silicide Formation in Rare Earth Oxides on Silicon

(2013) Oliver Bierwagen et al.   CRYSTAL GROWTH & DESIGN

Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer

(2013) Kai-Tak Lam et al.   IEEE ELECTRON DEVICE LETTERS

Interfacial Dipole at High-kDielectric/SiO2Interface: X-ray Photoelectron Spectroscopy Characteristics

(2013) Li Qiang Zhu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Production and processing of graphene and 2d crystals

(2013) Francesco Bonaccorso et al.   Materials Today

Modeling, simulation and design of the vertical Graphene Base Transistor

(2013) F. Driussi et al.   MICROELECTRONIC ENGINEERING

Defects at Ge:GeO2 and Ge:MeOx interfaces

(2013) H. Li et al.   MICROELECTRONIC ENGINEERING

Impact of elliptical cross-section on the propagation delay of multi-channel gate-all-around MOSFET based inverters

(2013) Subindu Kumar et al.   MICROELECTRONICS JOURNAL

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

(2013) H. S. Song et al.   Nanoscale

Graphene-analogous low-dimensional materials

(2013) Qing Tang et al.   PROGRESS IN MATERIALS SCIENCE

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

(2013) Dominik Martin et al.   SOLID-STATE ELECTRONICS

Multiscale simulation of carbon nanotube transistors

(2013) Cristell Maneux et al.   SOLID-STATE ELECTRONICS

Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: 300K transition to Single Electron Transistor

(2013) V. Deshpande et al.   SOLID-STATE ELECTRONICS

Modeling of lightly doped drain and source graphene nanoribbon field effect transistors

(2013) Mehdi Saremi et al.   SUPERLATTICES AND MICROSTRUCTURES

Growth, dielectric properties, and memory device applications of ZrO2 thin films

(2013) Debashis Panda et al.   THIN SOLID FILMS

Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors

(2013) Kyunghee Choi et al.   Journal of Materials Chemistry C

Control of Schottky barrier heights by inserting thin dielectric layers

(2012) L. Lin et al.   APPLIED PHYSICS LETTERS

A unified model for insulator selection to form ultra-low resistivity metal-insulator-semiconductor contacts to n-Si, n-Ge, and n-InGaAs

(2012) Ashish Agrawal et al.   APPLIED PHYSICS LETTERS

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

(2012) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

HfxZr1−xO2 compositional control using co-injection atomic layer deposition

(2012) Steven Consiglio et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Overview and status of bottom-up silicon nanowire electronics

(2012) A. Fasoli et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

High aspect ratio silicon and polyimide nanopillars by combination of nanosphere lithography and intermediate mask pattern transfer

(2012) Andreas Frommhold et al.   MICROELECTRONIC ENGINEERING

High mobility CMOS transistors on Si/SiGe heterostructure channels

(2012) Jungwoo Oh et al.   MICROELECTRONIC ENGINEERING

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

(2012) A. Salaün et al.   THIN SOLID FILMS

Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

(2012) Ekaterina Yurchuk et al.   THIN SOLID FILMS

Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

(2012) Takashi Ando   Materials

Metal/III-V effective barrier height tuning using atomic layer deposition of high-κ/high-κ bilayer interfaces

(2011) Jenny Hu et al.   APPLIED PHYSICS LETTERS

Bonding principles of passivation mechanism at III-V-oxide interfaces

(2011) J. Robertson et al.   APPLIED PHYSICS LETTERS

Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

(2011) J.-Y. Jason Lin et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

(2011) C.L. Hinkle et al.   CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE

Novel Germanium n-MOSFETs With Raised Source/Drain on Selectively Grown Ge on Si for Monolithic Integration

(2011) Hyun-Yong Yu et al.   IEEE ELECTRON DEVICE LETTERS

High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation

(2011) Choong Hyun Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomic mechanism of electric dipole formed at high-K: SiO2 interface

(2011) L. Lin et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

Low-temperature Atomic Layer Deposition of TiO2, Al2O3, and ZnO Thin Films

(2011) Taewook Nam et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Development of hafnium based high-k materials—A review

(2011) J.H. Choi et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Shifting Schottky barrier heights with ultra-thin dielectric layers

(2011) L. Lin et al.   MICROELECTRONIC ENGINEERING

III–V nMOSFETs – Some issues associated with roadmap worthiness (invited)

(2011) Iain Thayne et al.   MICROELECTRONIC ENGINEERING

Electrical characteristics of a vertically integrated field-effect transistor using non-intentionally doped Si nanowires

(2011) G. Rosaz et al.   MICROELECTRONIC ENGINEERING

Moore’s crystal ball: Device physics and technology past the 15nm generation

(2011) Kelin J. Kuhn   MICROELECTRONIC ENGINEERING

Academic and industry research progress in germanium nanodevices

(2011) Ravi Pillarisetty   NATURE

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

(2011) Gang He et al.   PROGRESS IN MATERIALS SCIENCE

Graphene based materials: Past, present and future

(2011) Virendra Singh et al.   PROGRESS IN MATERIALS SCIENCE

Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure

(2011) Soshi Sato et al.   SOLID-STATE ELECTRONICS

Basic investigation of HfO2 based metal–insulator–metal diodes

(2011) P. Dudek et al.   THIN SOLID FILMS

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

(2011) T. Bertaud et al.   THIN SOLID FILMS

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

(2010) Shankar Swaminathan et al.   APPLIED PHYSICS LETTERS

Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

(2010) S. Abermann et al.   APPLIED SURFACE SCIENCE

High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms

(2010) Duygu Kuzum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films

(2010) S. E. Potts et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Graphene–dielectric integration for graphene transistors

(2010) Lei Liao et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Gate-all-around technology: Taking advantage of ballistic transport?

(2010) J.L. Huguenin et al.   SOLID-STATE ELECTRONICS

Atomic Layer Deposition of High-kOxides of the Group 4 Metals for Memory Applications

(2009) Jaakko Niinistö et al.   ADVANCED ENGINEERING MATERIALS

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

(2009) S. Abermann et al.   APPLIED PHYSICS LETTERS

Origin of electric dipoles formed at high-k/SiO2 interface

(2009) Koji Kita et al.   APPLIED PHYSICS LETTERS

Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

Resistive non-volatile memory devices (Invited Paper)

(2009) Rainer Waser   MICROELECTRONIC ENGINEERING

Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

(2008) Seong Keun Kim et al.   ADVANCED MATERIALS

Laser annealed HfxZr1−xO2 high-k dielectric: Impact on morphology, microstructure, and electrical properties

(2008) Dina H. Triyoso et al.   APPLIED PHYSICS LETTERS

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

(2008) Kunihiko Iwamoto et al.   APPLIED PHYSICS LETTERS

Internal Photoemission over HfO2and Hf(1-x)SixO2High-kInsulating Barriers: Band Offset and Interfacial Dipole Characterization

(2008) Julie Widiez et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation

(2008) Annelies Delabie et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Applications of atomic layer deposition to nanofabrication and emerging nanodevices

(2008) Hyungjun Kim et al.   THIN SOLID FILMS

Work function control at metal high-dielectric-constant gate oxide interfaces

(2007) K. Tse et al.   MICROELECTRONIC ENGINEERING

3D nanowire gate-all-around transistors: Specific integration and electrical features

(2007) C. Dupré et al.   SOLID-STATE ELECTRONICS

Investigation of sub-nm ALD aluminum oxide films by plasma assisted etch-through

(2007) K. Grigoras et al.   THIN SOLID FILMS