A unified model for insulator selection to form ultra-low resistivity metal-insulator-semiconductor contacts to n-Si, n-Ge, and n-InGaAs

Metal/III-V effective barrier height tuning using atomic layer deposition of high-κ/high-κ bilayer interfaces

(2011) Jenny Hu et al.   APPLIED PHYSICS LETTERS

Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance

(2011) Ze Yuan et al.   APPLIED PHYSICS LETTERS

Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer

(2011) John F. Wager et al.   JOURNAL OF APPLIED PHYSICS

The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures

(2010) Donkoun Lee et al.   APPLIED PHYSICS LETTERS

Specific Contact Resistivity of Tunnel Barrier Contacts Used for Fermi Level Depinning

(2010) Arunanshu M. Roy et al.   IEEE ELECTRON DEVICE LETTERS

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

(2008) N. Stavitski et al.   IEEE ELECTRON DEVICE LETTERS