Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

Materials and electrical characterization of physical vapor deposited LaxLu1−xO3 thin films on 300 mm silicon

(2011) L. F. Edge et al.   APPLIED PHYSICS LETTERS

Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling

(2011) C. Marchiori et al.   APPLIED PHYSICS LETTERS

High temperature (1000 °C) compatible Y–La–Si–O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness

(2011) C. Dubourdieu et al.   APPLIED PHYSICS LETTERS

On the Electron and Hole Tunneling in a $ \hbox{HfO}_{2}$ Gate Stack With Extreme Interfacial-Layer Scaling

(2011) Takashi Ando et al.   IEEE ELECTRON DEVICE LETTERS

Maximized Benefit of La–Al–O Higher-$k$ Gate Dielectrics by Optimizing the La/Al Atomic Ratio

(2011) Hiroaki Arimura et al.   IEEE ELECTRON DEVICE LETTERS

EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

(2011) Takamasa Kawanago et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Kelvin probe study on formation of electric dipole at direct-contact HfO2/Si interfaces

(2011) Noriyuki Miyata et al.   JOURNAL OF APPLIED PHYSICS

Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling

(2011) Martin M. Frank et al.   MICROELECTRONIC ENGINEERING

Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

(2011) L.-Å. Ragnarsson et al.   MICROELECTRONIC ENGINEERING

Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy

(2010) Hiroaki Arimura et al.   APPLIED PHYSICS LETTERS

Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

(2010) Takashi Ando et al.   APPLIED PHYSICS LETTERS

Crystallographic-Orientation-Dependent Gate-Induced Drain Leakage in Nanoscale MOSFETs

(2010) Rajan K. Pandey et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- $k$ Gate Stacks

(2010) Gennadi Bersuker et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2Gate Stack Fabricated by Gate-Last Process

(2010) Takashi Ando et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Scaling equivalent oxide thickness with flat band voltage (VFB) modulation using in situ Ti and Hf interposed in a metal/high-k gate stack

(2010) Changhwan Choi et al.   JOURNAL OF APPLIED PHYSICS

Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO2Gate Dielectrics

(2009) Takashi Ando et al.   Applied Physics Express

Interaction of La2O3 capping layers with HfO2 gate dielectrics

(2009) M. Copel et al.   APPLIED PHYSICS LETTERS

Origin of electric dipoles formed at high-k/SiO2 interface

(2009) Koji Kita et al.   APPLIED PHYSICS LETTERS

Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- $k$ Stacks

(2009) A. Kerber et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

(2009) A. Kerber et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Effect of Composition in Ternary La–Al–O Films on Flat-Band Voltage for Application to Dual High-kGate Dielectric Technology

(2009) Masamichi Suzuki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

(2008) P. D. Kirsch et al.   APPLIED PHYSICS LETTERS

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

(2008) Kunihiko Iwamoto et al.   APPLIED PHYSICS LETTERS

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

(2008) Shinichi Takagi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Maximizing performance for higher K gate dielectrics

(2008) John Robertson   JOURNAL OF APPLIED PHYSICS