HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

标题
HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
作者
关键词
-
出版物
ACS Nano
Volume 7, Issue 3, Pages 2320-2325
出版商
American Chemical Society (ACS)
发表日期
2013-02-15
DOI
10.1021/nn305510u

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