Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates
出版年份 2015 全文链接
标题
Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates
作者
关键词
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出版物
Materials
Volume 8, Issue 12, Pages 8169-8182
出版商
MDPI AG
发表日期
2015-12-02
DOI
10.3390/ma8125454
参考文献
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