Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack

Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs

(2013) S. Deora et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

HfO2 dielectrics engineering using low power SF6 plasma on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

(2012) Yanzhen Wang et al.   APPLIED PHYSICS LETTERS

Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures

(2012) S.-H. Huang et al.   APPLIED PHYSICS LETTERS

Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

(2012) Yi Zhao   Materials

Physical and Electrical Analysis of Post-$ \hbox{HfO}_{2}$ Fluorine Plasma Treatment for the Improvement of $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs' Performance

(2011) Yen-Ting Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics

(2011) Chih-Ren Hsieh et al.   MICROELECTRONIC ENGINEERING

Benefit of NMOS by Compressive SiN as Stress Memorization Technique and Its Mechanism

(2010) Chia-Chun Liao et al.   IEEE ELECTRON DEVICE LETTERS

Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET

(2010) Chih-Ren Hsieh et al.   MICROELECTRONIC ENGINEERING

Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs

(2010) Hyuk-Min Kwon et al.   MICROELECTRONIC ENGINEERING

A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress

(2009) Kyong Taek Lee et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

(2009) A. Kerber et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

(2009) S. Dueñas et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

High mobility strained Ge PMOSFETs with high- gate dielectric and metal gate on Si substrate

(2008) J.P. Donnelly et al.   ELECTRONICS LETTERS