Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

(2015) Qifeng Lu et al.   Materials

Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack

(2014) Yung-Yu Chen   Materials

Germanium Based Field-Effect Transistors: Challenges and Opportunities

(2014) Patrick Goley et al.   Materials

Dielectric relaxation of high-k oxides

(2013) Chun Zhao et al.   Nanoscale Research Letters

Atomic layer deposition of Ti-HfO2 dielectrics

(2012) Matthew Werner et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors

(2012) Qi Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

(2012) Yi Zhao   Materials

Study of Direct-Contact HfO2/Si Interfaces

(2012) Noriyuki Miyata   Materials

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

(2012) J. Tao et al.   Materials

Comparison of the interfacial and electrical properties of HfAlO films on Ge with S and GeO2 passivation

(2011) X. F. Li et al.   APPLIED PHYSICS LETTERS

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

(2009) Liu-Ying Huang et al.   APPLIED SURFACE SCIENCE

Atomic Layer Deposition of Lanthanum Stabilized Amorphous Hafnium Oxide Thin Films

(2009) Tuo Wang et al.   CHEMISTRY OF MATERIALS

Effects of Atomic Layer Deposition-Al2O3Interface Layers on Interfacial Properties of Ge Metal–Oxide–Semiconductor Capacitors

(2009) Ryosuke Kato et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Dielectric relaxation of lanthanum doped zirconium oxide

(2009) C. Z. Zhao et al.   JOURNAL OF APPLIED PHYSICS

Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing

(2009) D. Sahin et al.   THIN SOLID FILMS

Formation of an oxide-free Ge∕TiO2 interface by atomic layer deposition on brominated Ge

(2008) Pendar Ardalan et al.   APPLIED PHYSICS LETTERS

Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization

(2008) Koji Kita et al.   APPLIED SURFACE SCIENCE

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today