Effects of Atomic Layer Deposition-Al2O3Interface Layers on Interfacial Properties of Ge Metal–Oxide–Semiconductor Capacitors

标题
Effects of Atomic Layer Deposition-Al2O3Interface Layers on Interfacial Properties of Ge Metal–Oxide–Semiconductor Capacitors
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 5, Pages 05DA04
出版商
Japan Society of Applied Physics
发表日期
2009-05-20
DOI
10.1143/jjap.48.05da04

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