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Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-κ CeZrO4Ternary Oxide as Gate Dielectric

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Dielectric relaxation of lanthanum doped zirconium oxide

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Pentacene Thin-Film Transistors with Ta2O5 as the Gate Dielectric

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Tension deformation mechanism and fracture characteristics of high nitrogen steel 6Cr21Mn10MoVNbN at 25–800°C

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The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

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