Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

标题
Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices
作者
关键词
-
出版物
Materials
Volume 5, Issue 8, Pages 1413-1438
出版商
MDPI AG
发表日期
2012-08-17
DOI
10.3390/ma5081413

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