Comparison of the interfacial and electrical properties of HfAlO films on Ge with S and GeO2 passivation

Surface Defects and Passivation of Ge and III–V Interfaces

(2011) Michel Houssa et al.   MRS BULLETIN

Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

(2010) O. Bethge et al.   APPLIED PHYSICS LETTERS

The role of La surface chemistry in the passivation of Ge

(2010) A. Dimoulas et al.   APPLIED PHYSICS LETTERS

Physicochemical and Electrical Properties of LaLuO[sub 3]/Ge(100) Structures Submitted to Postdeposition Annealings

(2010) C. Radtke et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

(2009) Yasuhiro Oshima et al.   APPLIED PHYSICS LETTERS

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

(2008) Rahul Suri et al.   APPLIED PHYSICS LETTERS

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today