Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

Origin of electrons emitted into vacuum from InGaN light emitting diodes

(2014) Justin Iveland et al.   APPLIED PHYSICS LETTERS

Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates

(2014) Pengfei Tian et al.   JOURNAL OF APPLIED PHYSICS

Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop

(2013) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

(2013) Richard P. Green et al.   APPLIED PHYSICS LETTERS

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

(2013) M. Binder et al.   APPLIED PHYSICS LETTERS

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

(2013) Giovanni Verzellesi et al.   JOURNAL OF APPLIED PHYSICS

Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

(2013) Emmanouil Kioupakis et al.   NEW JOURNAL OF PHYSICS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

(2012) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

(2012) Yuh-Renn Wu et al.   APPLIED PHYSICS LETTERS

Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

(2012) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

(2012) Dong-Soo Shin et al.   APPLIED PHYSICS LETTERS

Numerical analysis of indirect Auger transitions in InGaN

(2012) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

(2012) B. Galler et al.   APPLIED PHYSICS LETTERS

Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes

(2012) Pengfei Tian et al.   APPLIED PHYSICS LETTERS

Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon

(2012) Hieu Pham Trung Nguyen et al.   NANOTECHNOLOGY

Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding

(2012) Ya Ya Kudryk et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers

(2011) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Visible-Light Communications Using a CMOS-Controlled Micro-Light- Emitting-Diode Array

(2011) Jonathan J. D. McKendry et al.   JOURNAL OF LIGHTWAVE TECHNOLOGY

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

(2010) Qi Dai et al.   APPLIED PHYSICS LETTERS

Very-High Temperature (200 $^{\circ}$C) and High-Speed Operation of Cascade GaN-Based Green Light- Emitting Diodes With an InGaN Insertion Layer

(2010) Jin-Wei Shi et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths

(2010) C. H. Wang et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes

(2010) Zheng Gong et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Effect of localized states on internal quantum efficiency of III-nitride LEDs

(2010) Sergey Yu. Karpov   Physica Status Solidi-Rapid Research Letters

Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes

(2009) J.-R. Chen et al.   APPLIED PHYSICS B-LASERS AND OPTICS

Temperature Dependence of Radiative and Auger Losses in Quantum Wells

(2008) JÖrg Hader et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes

(2008) Hisashi Masui et al.   JAPANESE JOURNAL OF APPLIED PHYSICS