Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

(2012) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

(2012) F. Akyol et al.   APPLIED PHYSICS LETTERS

Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor

(2011) J.-W. Yu et al.   APPLIED PHYSICS LETTERS

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

(2011) Samantha E Bennett et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes

(2011) D. S. Sizov et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

(2011) Chi-Kang Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Carrier localization mechanisms in InxGa1−xN/GaN quantum wells

(2011) D. Watson-Parris et al.   PHYSICAL REVIEW B

Impact of Carrier Transport on Aquamarine–Green Laser Performance

(2010) Dmitry S. Sizov et al.   Applied Physics Express

A numerical study of Auger recombination in bulk InGaN

(2010) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes

(2010) Yen-Kuang Kuo et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method

(2010) I-Lin Lu et al.   JOURNAL OF APPLIED PHYSICS

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

(2010) X. Ni et al.   SUPERLATTICES AND MICROSTRUCTURES

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting

(2009) Yuh-Renn Wu et al.   JOURNAL OF APPLIED PHYSICS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS