High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways

(2014) You Seung Rim et al.   ADVANCED MATERIALS

Electrical and Reliability Characteristics of High-$\kappa~{\rm HoTiO}_{3}~\alpha$-InGaZnO Thin-Film Transistors

(2014) Tung-Ming Pan et al.   IEEE ELECTRON DEVICE LETTERS

Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor

(2014) Hong Yoon Jung et al.   Scientific Reports

Synergistic Approach to High-Performance Oxide Thin Film Transistors Using a Bilayer Channel Architecture

(2013) Xinge Yu et al.   ACS Applied Materials & Interfaces

High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing

(2013) Bo-Yuan Su et al.   APPLIED PHYSICS LETTERS

Solution-Processable Zirconium Oxide Gate Dielectrics for Flexible Organic Field Effect Transistors Operated at Low Voltages

(2013) Young Min Park et al.   CHEMISTRY OF MATERIALS

High-Performance InTiZnO Thin-Film Transistors Deposited by Magnetron Sputtering

(2013) Ao Liu et al.   CHINESE PHYSICS LETTERS

Room-temperature fabrication of ultra-thin ZrOx dielectric for high-performance InTiZnO thin-film transistors

(2013) A. Liu et al.   CURRENT APPLIED PHYSICS

Bottom-gate amorphous In2O3 thin film transistors fabricated by magnetron sputtering

(2013) Yang Jiao et al.   Electronic Materials Letters

High-performance In-Zn-O thin-film transistors with a soluble processed ZrO2gate insulator

(2013) Byeong-Geun Son et al.   Physica Status Solidi-Rapid Research Letters

Solution-processed amorphous hafnium-lanthanum oxide gate insulator for oxide thin-film transistors

(2013) Jieun Ko et al.   Journal of Materials Chemistry C

Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability

(2012) Hyun-Suk Kim et al.   ACS Applied Materials & Interfaces

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °C

(2012) Xiaoli Xu et al.   APPLIED PHYSICS LETTERS

Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

(2012) Jae Chul Park et al.   IEEE ELECTRON DEVICE LETTERS

The Effects of Dual-Active-Layer Modulation on a Low-Temperature Solution-Processed Oxide Thin-Film Transistor

(2012) Woong Hee Jeong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors

(2012) Xingqiang Liu et al.   NANO LETTERS

Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors

(2011) Young Min Park et al.   ADVANCED MATERIALS

High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

(2011) George Adamopoulos et al.   ADVANCED MATERIALS

Complementary Metal Oxide Semiconductor Technology With and On Paper

(2011) Rodrigo Martins et al.   ADVANCED MATERIALS

Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

(2011) Mandar J. Gadre et al.   APPLIED PHYSICS LETTERS

Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films

(2011) Soo Min Hwang et al.   APPLIED PHYSICS LETTERS

Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

(2011) Kyung Min Kim et al.   IEEE ELECTRON DEVICE LETTERS

Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

(2010) Yu-Chun Chen et al.   APPLIED PHYSICS LETTERS

Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature

(2010) Joo Hyon Noh et al.   IEEE ELECTRON DEVICE LETTERS

Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

(2009) Sunho Jeong et al.   ADVANCED MATERIALS

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics

(2009) P. Barquinha et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors

(2008) E. Fortunato et al.   SOLID-STATE ELECTRONICS