Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films

Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate

(2010) Yung-Hsien Wu et al.   APPLIED PHYSICS LETTERS

High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

(2010) H. Döscher et al.   JOURNAL OF APPLIED PHYSICS

Characteristics of Ce-Doped ZrO[sub 2] Dielectric Films Prepared by a Solution Deposition Process

(2010) Myung Soo Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

High-κ/Metal Gate Science and Technology

(2009) Supratik Guha et al.   Annual Review of Materials Research

Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)

(2009) L. Lamagna et al.   APPLIED PHYSICS LETTERS

Impact of Process Optimizations on the Electrical Performance of High-k Layers Deposited by Aqueous Chemical Solution Deposition

(2008) S. Van Elshocht et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY