High-Performance InTiZnO Thin-Film Transistors Deposited by Magnetron Sputtering

Low-temperature solution-processed alumina as gate dielectric for reducing the operating-voltage of organic field-effect transistors

(2013) Jun Peng et al.   APPLIED PHYSICS LETTERS

Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

(2012) M. Furuta et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Solution-Processed ZrInZnO Thin-Film Transistors

(2012) Phan Trong Tue et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process

(2011) Ho Yong Chong et al.   APPLIED PHYSICS LETTERS

Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

(2011) George Adamopoulos et al.   APPLIED PHYSICS LETTERS

Study of Ti addition in channel layers for In–Zn–O thin film transistors

(2011) Qijun Yao et al.   APPLIED SURFACE SCIENCE

Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering

(2011) Hai-Qin Huang et al.   CHINESE PHYSICS LETTERS

Effects of Ti addition on sol-gel derived InO and InZnO thin film transistors

(2011) Jung-Hye Kim et al.   CURRENT APPLIED PHYSICS

The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process

(2011) Si Joon Kim et al.   JOURNAL OF CRYSTAL GROWTH

Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

(2010) Woong Hee Jeong et al.   APPLIED PHYSICS LETTERS

High stability of amorphous hafnium-indium-zinc-oxide thin film transistor

(2010) Eugene Chong et al.   APPLIED PHYSICS LETTERS

Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition

(2009) J. B. Kim et al.   APPLIED PHYSICS LETTERS

Improvement of On–Off-Current Ratio in $ \hbox{TiO}_{\rm x}$ Active-Channel TFTs Using $\hbox{N}_{2} \hbox{O}$ Plasma Treatment

(2009) Jae-Woo Park et al.   IEEE ELECTRON DEVICE LETTERS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

New n-Type $\hbox{TiO}_{2}$ Transparent Active Channel TFTs Fabricated With a Solution Process

(2008) Jae-Woo Park et al.   IEEE ELECTRON DEVICE LETTERS