Bottom-gate amorphous In2O3 thin film transistors fabricated by magnetron sputtering

In this letter, bottom-gate thin film transistors using amorphous In2O3 as the n-channel active layer were fabricated on SiO2/Si substrates by direct current magnetron sputtering at room temperature. By controlling the sputtering time, In2O3 can be grown into the amorphous phase. Compare to its crystalline counterpart, amorphous In2O3 offer distinctive attractions such as smoother surfaces, better film uniformity, while maintaining comparable or greater carrier mobility. The device with amorphous channel layer shows good performance with the mobility of 15 cm(2)/Vs and the current on-off ratio of 10(6). The device operates in enhancement mode with the threshold voltage of 1.4 V. Excellent device performance and low fabrication temperature make the In2O3-TFTs suitable for the potential applications in the large-area electronics.