High current stress effects in amorphous-InGaZnO4 thin-film transistors

Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

(2012) Sung-Hwan Choi et al.   APPLIED PHYSICS LETTERS

Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

(2012) Jae Gwang Um et al.   APPLIED PHYSICS LETTERS

Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors

(2012) Tien-Yu Hsieh et al.   APPLIED PHYSICS LETTERS

Edge Effects in Bottom-Gate Inverted Staggered Thin-Film Transistors

(2012) Mallory Mativenga et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy

(2011) E. A. Douglas et al.   APPLIED PHYSICS LETTERS

Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

(2011) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

(2011) Kwang Hwan Ji et al.   APPLIED PHYSICS LETTERS

Degradation Model of Self-Heating Effects in Silicon-on-Glass TFTs

(2011) Mallory Mativenga et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

(2011) Md Delwar Hossain Chowdhury et al.   JOURNAL OF APPLIED PHYSICS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Interface and bulk effects for bias—light-illumination instability in amorphous-In—Ga—Zn—O thin-film transistors

(2010) Kenji Nomura et al.   Journal of the Society for Information Display

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS