High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

Published 2009 View Full Article

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Title
High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 4, Pages 041109
Publisher
AIP Publishing
Online
2009-01-28
DOI
10.1063/1.3075853
References
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