THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

We have investigated the characteristics of THz generation including the dependence of the output power and polarization on the incident angle and pump polarization from two series of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal organic chemical vapor deposition (MOCVD), respectively. Following the analyses of our results, we have attributed the mechanism of the THz generation from these InN samples to the destructive interference between optical rectification and photocurrent surge. Under the average intensity of 176 W cm(-2) for the subpicosecond laser pulses at 782 nm, the THz output powers were measured to be as high as 2.4 mu W from the 220 nm InN film, with the output frequencies spanning the band from 300 GHz to 2.5 THz.