Optical gain characteristics of staggered InGaN quantum wells lasers
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Title
Optical gain characteristics of staggered InGaN quantum wells lasers
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 11, Pages 113110
Publisher
AIP Publishing
Online
2010-06-10
DOI
10.1063/1.3407564
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Related references
Note: Only part of the references are listed.- 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate
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- 500 nm electrically driven InGaN based laser diodes
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- Auger recombination rates in nitrides from first principles
- (2009) Kris T. Delaney et al. APPLIED PHYSICS LETTERS
- Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm
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- Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
- (2009) H.P. Zhao et al. IET Optoelectronics
- Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes
- (2009) Seoung-Hwan Park et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Type-II InGaN-GaNAs quantum wells for lasers applications
- (2008) Ronald A. Arif et al. APPLIED PHYSICS LETTERS
- On the importance of radiative and Auger losses in GaN-based quantum wells
- (2008) J. Hader et al. APPLIED PHYSICS LETTERS
- Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
- (2008) Ronald A Arif et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
- (2008) Hongping Zhao et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers
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- Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm
- (2008) Hongping Zhao et al. OPTICAL AND QUANTUM ELECTRONICS
- Improvement in piezoelectric effect of violet InGaN laser diodes
- (2008) Sheng-Horng Yen et al. OPTICS COMMUNICATIONS
- Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm
- (2008) Ronald A. Arif et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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