Journal
JOURNAL OF CRYSTAL GROWTH
Volume 310, Issue 23, Pages 4947-4953Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.07.122
Keywords
Photoluminescence; MOCVD; Nitrides; InN
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In this study, we report on the pulsed metalorganic vapor phase epitaxy (MOVPE) of InN as well as the optical and electronic properties of the films as a function of V/III ratio and growth temperatures. The growth of InN films was conducted utilizing a vertical reactor with TMIn and NH(3) as the In- and N-precursors, respectively. Metallic droplet-free InN films were achieved oil GaN/sapphire template in a pulsed MOVPE mode with low V/III ratio condition. In the pulsed growth mode, NH(3) Was constantly flowing while the TMIn was sent into the reactor chamber for a 36-s pulse and then it bypassed the reactor chamber for an 18-s Pulse for a total cycle time of 54 s. At a growth pressure of 200 Torr, the effects of growth temperature (510-575 degrees C) and V/III ratio (12,460-17,100) on the photoluminescence (PL) transitions were investigated. Morphological evolution as well as the electrical quality of the overgrown films have also been studied for the given growth conditions. (C) 2008 Elsevier B.V. All rights reserved.
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