Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 15, Issue 4, Pages 1218-1225Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2009.2015580
Keywords
Colloid; InGaN quantum wells (QWs); LEDs; light extraction efficiency; microlens arrays
Categories
Funding
- National Science Foundation (NSF) Electrical, Communications and Cyber Systems (ECCS) Award [0701421]
- NSF Chemical, Bioengineering, Environmental, and Transport Systems (CBET) Award [0828426]
- Peter C. Rossin Assistant Professorship
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [0828426] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0701421] Funding Source: National Science Foundation
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Improvement of light extraction efficiency of InGaN LEDs using colloidal-based SiO2/polystyrene (PS) microlens arrays was demonstrated. The size effect of the SiO2 microspheres and the thickness effect of the PS layer on the light extraction efficiency of III-nitride LEDs were studied. The monolayer rapid convective deposition conditions for SiO2 microspheres were also investigated. Ray tracing simulations show that the use of microlens arrays can lead to increase in light extraction efficiency of InGaN LEDs by 2.64 times. This is consistent with experiments that demonstrated 2.49 times improvement in light extraction utilizing SiO2/PS microlens arrays. The enhancement in light extraction efficiency is attributed to increase in effective photon escape cone due to SiO2/PS microlens arrays, and reduced Fresnel reflection within the photon escape cone due to the grading of refractive index change between GaN/SiO2/PS/air interface.
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