Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks

Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO x /TiO y frameworks due to oxygen vacancy drifts

(2011) Yoon Cheol Bae et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

(2011) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

(2010) June Sik Kwak et al.   APPLIED PHYSICS LETTERS

Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions

(2010) C. Nauenheim et al.   APPLIED PHYSICS LETTERS

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

(2010) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies

(2010) Jiale Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach

(2010) Shuu'ichirou Yamamoto et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Self-Aligned Memristor Cross-Point Arrays Fabricated with One Nanoimprint Lithography Step

(2010) Qiangfei Xia et al.   NANO LETTERS

Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays

(2010) Shimeng Yu et al.   NANOTECHNOLOGY

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Oxygen ion drifted bipolar resistive switching behaviors in TiO2–Al electrode interfaces

(2010) Young Ho Do et al.   THIN SOLID FILMS

Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions

(2009) Young Ho Do et al.   APPLIED PHYSICS LETTERS

TiN electrode-induced bipolar resistive switching of TiO2 thin films

(2009) Young Ho Do et al.   CURRENT APPLIED PHYSICS

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

High-Current-Density CuOx/InZnOxThin-Film Diodes for Cross-Point Memory Applications

(2008) Bo Soo Kang et al.   ADVANCED MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology