A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3 -Based Memory Cell

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

(2016) Suhas Kumar et al.   ADVANCED MATERIALS

Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models

(2016) Hisao Nakamura et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

(2016) Christoph Baeumer et al.   Nature Communications

Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control

(2015) Evgeny Mikheev et al.   Scientific Reports

Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO3 thin films

(2015) N. Raab et al.   AIP Advances

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

(2015) Astrid Marchewka et al.   Advanced Electronic Materials

Role of oxygen vacancies in resistive switching in Pt/Nb-doped SrTiO3

(2014) Jinho Park et al.   APPLIED PHYSICS LETTERS

A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory

(2014) Kan-Hao Xue et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells

(2014) Malgorzata Sowinska et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic Mobility Limiting Mechanisms in Lanthanum-Doped Strontium Titanate

(2014) Amit Verma et al.   PHYSICAL REVIEW LETTERS

Determination of the electrostatic potential distribution in Pt/Fe:SrTiO3/Nb:SrTiO3 thin-film structures by electron holography

(2014) Astrid Marchewka et al.   Scientific Reports

Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories

(2013) Moon Young Yang et al.   APPLIED PHYSICS LETTERS

Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching

(2013) Katsumasa Kamiya et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dislocation impact on resistive switching in single-crystal SrTiO3

(2013) R. J. Kamaladasa et al.   JOURNAL OF APPLIED PHYSICS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Oxygen vacancy filament formation in TiO2: A kinetic Monte Carlo study

(2012) Duo Li et al.   JOURNAL OF APPLIED PHYSICS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO2/metal structures

(2012) Xavier Cartoixà et al.   PHYSICAL REVIEW B

Electronic structure of oxygen vacancies inSrTiO3andLaAlO3

(2012) C. Mitra et al.   PHYSICAL REVIEW B

Strength of the Effective Coulomb Interaction at Metal and Insulator Surfaces

(2012) Ersoy Şaşıoğlu et al.   PHYSICAL REVIEW LETTERS

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Computational investigations into the operating window for memristive devices based on homogeneous ionic motion

(2011) Mohammad Noman et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

(2011) Christian Walczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

(2011) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Conductive Path Formation in the Ta2O5 Atomic Switch: First-Principles Analyses

(2010) Tingkun Gu et al.   ACS Nano

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electronic transport and colossal electroresistance in SrTiO3:Nb-based Schottky junctions

(2009) D. S. Shang et al.   APPLIED PHYSICS LETTERS

Schottky barriers at transition-metal/SrTiO3(001)interfaces

(2009) M. Mrovec et al.   PHYSICAL REVIEW B

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology