Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching

Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3Insertion Layer

(2013) Moon Young Yang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

(2013) Katsumasa Kamiya et al.   PHYSICAL REVIEW B

Electron spin resonance signature of the oxygen vacancy in HfO2

(2012) R. Gillen et al.   APPLIED PHYSICS LETTERS

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

(2012) Katsumasa Kamiya et al.   APPLIED PHYSICS LETTERS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides

(2012) Blanka Magyari-Köpe et al.   JOURNAL OF MATERIALS SCIENCE

Si:WO3heterostructure for Z-scheme water splitting: an ab initio study

(2012) Weichao Wang et al.   Journal of Materials Chemistry A

First-principles molecular dynamics study on the atomistic behavior of His503 in bovine cytochrome c oxidase

(2011) Katsumasa Kamiya et al.   BIOCHIMICA ET BIOPHYSICA ACTA-BIOENERGETICS

Challenges and opportunities for future non-volatile memory technology

(2011) Yoshio Nishi   CURRENT APPLIED PHYSICS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Semiconductor-to-metal transition in WO3−x: Nature of the oxygen vacancy

(2011) Fenggong Wang et al.   PHYSICAL REVIEW B

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Electronic correlation effects in reduced rutileTiO2within theLDA+Umethod

(2010) Seong-Geon Park et al.   PHYSICAL REVIEW B

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE