Progress in efficient doping of high aluminum-containing group III-nitrides

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

(2017) Xiao Wang et al.   Scientific Reports

Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs

(2016) Yuewei Zhang et al.   Applied Physics Express

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

(2016) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

(2016) Sanyam Bajaj et al.   APPLIED PHYSICS LETTERS

An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature

(2016) S. Zhao et al.   APPLIED PHYSICS LETTERS

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

(2016) M. Martens et al.   APPLIED PHYSICS LETTERS

Improvement of p -type conductivity in Al-rich AlGaN substituted by Mg Ga δ -doping (AlN) m /(GaN) n ( m ≥ n ) superlattice

(2016) Xin-he Jiang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Electronic properties of Si-doped Alx Ga1−xN with aluminum mole fractions above 80%

(2016) Frank Mehnke et al.   JOURNAL OF APPLIED PHYSICS

Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures

(2016) W.C. Yang et al.   JOURNAL OF CRYSTAL GROWTH

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

(2016) R. J. Kaplar et al.   ECS Journal of Solid State Science and Technology

Interband tunneling for hole injection in III-nitride ultraviolet emitters

(2015) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

(2015) Yingda Chen et al.   APPLIED PHYSICS LETTERS

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

(2015) Brendan P. Gunning et al.   JOURNAL OF APPLIED PHYSICS

Three-Dimensional Quantum Confinement of Charge Carriers in Self-Organized AlGaN Nanowires: A Viable Route to Electrically Injected Deep Ultraviolet Lasers

(2015) S. Zhao et al.   NANO LETTERS

Polarization enhanced photoresponse of AlGaN p-i-n photodetectors

(2015) Lian-hong Yang et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Effect of indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the development of deep-UV laser structures in the form of graded-index separate confinement heterostructure (GRINSCH)

(2015) Haiding Sun et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires

(2015) Mei Qin et al.   Science China-Technological Sciences

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

(2015) S. Zhao et al.   Scientific Reports

High-Gain AlGaN Solar-Blind Avalanche Photodiodes

(2014) Zhen Guang Shao et al.   IEEE ELECTRON DEVICE LETTERS

Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

(2014) J. L. Lyons et al.   JOURNAL OF APPLIED PHYSICS

Hexagonal boron nitride for deep ultraviolet photonic devices

(2014) H X Jiang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

(2014) T. M. Al tahtamouni et al.   AIP Advances

High Mg effective incorporation in Al-rich AlxGa1 - xN by periodic repetition of ultimate V/III ratio conditions

(2014) Tongchang Zheng et al.   Nanoscale Research Letters

UV emitters based on an AlGaN p–n junction in the form of graded-index separate confinement heterostructure

(2013) Haiding Sun et al.   Applied Physics Express

Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters

(2013) B. Cheng et al.   APPLIED PHYSICS LETTERS

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

(2012) Brendan Gunning et al.   APPLIED PHYSICS LETTERS

Plasma-assisted electroepitaxy of GaN layers from the liquid Ga melt

(2012) S.V. Novikov et al.   JOURNAL OF CRYSTAL GROWTH

Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping

(2011) Yong-Bing Tang et al.   ACS Nano

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

(2011) R. Dahal et al.   APPLIED PHYSICS LETTERS

Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

(2011) Cyril Pernot et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

(2010) Meng Zhang et al.   APPLIED PHYSICS LETTERS

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

(2010) L. Zhang et al.   APPLIED PHYSICS LETTERS

RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(001) substrates

(2010) M. Kakuda et al.   JOURNAL OF CRYSTAL GROWTH

Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

(2010) Yitao Liao et al.   Physica Status Solidi-Rapid Research Letters

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

(2009) A. Bhattacharyya et al.   APPLIED PHYSICS LETTERS

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Diameter-dependent dopant location in silicon and germanium nanowires

(2009) P. Xie et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping

(2008) C. Bayram et al.   APPLIED PHYSICS LETTERS

Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN

(2008) Gon Namkoong et al.   APPLIED PHYSICS LETTERS

Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

(2008) Harumasa Yoshida et al.   APPLIED PHYSICS LETTERS

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

(2008) Shawn D. Burnham et al.   JOURNAL OF APPLIED PHYSICS

Delta-doping optimization for high quality p-type GaN

(2008) C. Bayram et al.   JOURNAL OF APPLIED PHYSICS

Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy

(2008) John Simon et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

GaN:-Mg grown by MOVPE: Structural properties and their effect on the electronic and optical behavior

(2007) T. Li et al.   JOURNAL OF CRYSTAL GROWTH