Hexagonal boron nitride for deep ultraviolet photonic devices

270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

(2013) James R. Grandusky et al.   Applied Physics Express

Hexagonal boron nitride and 6H-SiC heterostructures

(2013) S. Majety et al.   APPLIED PHYSICS LETTERS

Sensitivity analysis of electron leakage in III-nitride light-emitting diodes

(2013) Joachim Piprek et al.   APPLIED PHYSICS LETTERS

Dry etching techniques for active devices based on hexagonal boron nitride epilayers

(2013) Samuel Grenadier et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

(2013) Yang Li et al.   IEEE Photonics Journal

A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

(2012) Toshiki Makimoto et al.   Applied Physics Express

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

(2012) Max Shatalov et al.   Applied Physics Express

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

(2012) Toru Kinoshita et al.   Applied Physics Express

Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

(2012) J. Li et al.   APPLIED PHYSICS LETTERS

Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells

(2012) T. M. Al tahtamouni et al.   APPLIED PHYSICS LETTERS

Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics

(2012) S. Majety et al.   APPLIED PHYSICS LETTERS

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

(2012) Yasuyuki Kobayashi et al.   NATURE

Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quantum Wells

(2012) Huimin Lu et al.   OPTICS EXPRESS

Origin of the significantly enhanced optical transitions in layered boron nitride

(2012) Bing Huang et al.   PHYSICAL REVIEW B

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

(2011) R. Dahal et al.   APPLIED PHYSICS LETTERS

III-Nitride full-scale high-resolution microdisplays

(2011) Jacob Day et al.   APPLIED PHYSICS LETTERS

Hexagonal boron nitride epitaxial layers as neutron detector materials

(2011) J. Li et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

(2010) Akira Fujioka et al.   Applied Physics Express

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

(2010) Cyril Pernot et al.   Applied Physics Express

Large Chip High Power Deep Ultraviolet Light-Emitting Diodes

(2010) Max Shatalov et al.   Applied Physics Express

Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations

(2010) A. Atsushi Yamaguchi   APPLIED PHYSICS LETTERS

Electron-beam excitation

(2010) E. Fred Schubert et al.   Nature Photonics

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

p-type conduction in beryllium-implanted hexagonal boron nitride films

(2009) B. He et al.   APPLIED PHYSICS LETTERS

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys

(2009) M. L. Nakarmi et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics