AlGaN channel field effect transistors with graded heterostructure ohmic contacts

An AlN/Al0.85Ga0.15N high electron mobility transistor

(2016) Albert G. Baca et al.   APPLIED PHYSICS LETTERS

Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

(2016) Kazuki Mori et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs

(2015) Pil Sung Park et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

(2014) Sanyam Bajaj et al.   APPLIED PHYSICS LETTERS

AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

(2014) N. Yafune et al.   ELECTRONICS LETTERS

Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack

(2013) Norimasa Yafune et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

(2010) Hirokuni Tokuda et al.   Applied Physics Express

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

(2010) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

Ohmic Contact to High-Aluminum-Content AlGaN Epilayers

(2009) Surendra Srivastava et al.   JOURNAL OF ELECTRONIC MATERIALS

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

(2008) Takuma Nanjo et al.   APPLIED PHYSICS LETTERS

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

(2008) Ajay Raman et al.   JAPANESE JOURNAL OF APPLIED PHYSICS