The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

(2018) Brandon Mitchell et al.   JOURNAL OF APPLIED PHYSICS

Carrier localization in the vicinity of dislocations in InGaN

(2017) F. C-P. Massabuau et al.   JOURNAL OF APPLIED PHYSICS

“W-shaped” injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate

(2017) Jianfei Li et al.   OPTICS EXPRESS

Yellow-red light-emitting diodes using periodic Ga-flow interruption during deposition of InGaN well

(2017) Kwanjae Lee et al.   OPTICS EXPRESS

Carrier localization in InGaN by composition fluctuations: implication to the “green gap”

(2017) Sergey Yu. Karpov   Photonics Research

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

(2016) M. J. Davies et al.   JOURNAL OF APPLIED PHYSICS

Bridging the “green gap” of LEDs: giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals

(2016) Yu-Lin Tsai et al.   Nanoscale

Enhanced optical output and reduction of the quantum-confined Stark effect in surface plasmon-enhanced green light-emitting diodes with gold nanoparticles

(2016) Chu-Young Cho et al.   OPTICS EXPRESS

Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes

(2016) Kwanjae Lee et al.   OPTICS EXPRESS

High luminous efficacy green light-emitting diodes with AlGaN cap layer

(2016) Abdullah I. Alhassan et al.   OPTICS EXPRESS

Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes

(2016) Shengjun Zhou et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

InGaN/GaN-based green-light-emitting diodes with an inserted InGaN/GaN-graded superlattice layer

(2016) Jin-Young Park et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

(2016) Matthias Auf der Maur et al.   PHYSICAL REVIEW LETTERS

Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

(2016) C.X. Ren et al.   SUPERLATTICES AND MICROSTRUCTURES

Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

(2015) Shengjun Zhou et al.   APPLIED SURFACE SCIENCE

The key role of off-axis singularities in free-space vortex transmutation

(2014) David Novoa et al.   APPLIED PHYSICS B-LASERS AND OPTICS

Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

(2014) Jaekyun Kim et al.   OPTICS EXPRESS

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

(2014) Tim J. Puchtler et al.   ACS Photonics

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

(2013) Jaekyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs

(2013) Chuanyu Jia et al.   OPTICS EXPRESS

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

(2012) L. C. Le et al.   APPLIED PHYSICS LETTERS

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

(2011) Shigetaka Tomiya et al.   APPLIED PHYSICS LETTERS

Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

(2011) T. Detchprohm et al.   APPLIED PHYSICS LETTERS

Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

(2011) Qifeng Shan et al.   APPLIED PHYSICS LETTERS

It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting

(2011) K. P. O'Donnell et al.   Physica Status Solidi-Rapid Research Letters

Effects of Nanometer-Scale Photonic Crystal Structures on the Light Extraction From GaN Light-Emitting Diodes

(2010) Young Chul Shin et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

(2009) Jae-Hyun Ryou et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers

(2008) Shi Jong Leem et al.   JOURNAL OF CRYSTAL GROWTH

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

(2008) P.T. Törmä et al.   JOURNAL OF CRYSTAL GROWTH