A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

(2014) M. J. Davies et al.   APPLIED PHYSICS LETTERS

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

(2014) T. J. Badcock et al.   JOURNAL OF APPLIED PHYSICS

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

(2014) Matthew J. Davies et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination

(2014) Torsten Langer et al.   PHYSICAL REVIEW B

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

(2013) M. Gladysiewicz et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

(2013) T. Li et al.   APPLIED PHYSICS LETTERS

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

(2012) S. Hammersley et al.   JOURNAL OF APPLIED PHYSICS

Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer

(2010) Yong Xia et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Carrier recombination dynamics inInxGa1−xN/GaNmultiple quantum wells

(2010) Colin-N. Brosseau et al.   PHYSICAL REVIEW B

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

(2008) P.T. Törmä et al.   JOURNAL OF CRYSTAL GROWTH

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

(2008) Shi Jong Leem et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY