Carrier localization in the vicinity of dislocations in InGaN

Dislocation core structures in (0001) InGaN

(2016) S. L. Rhode et al.   JOURNAL OF APPLIED PHYSICS

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

(2015) Nan Niu et al.   APPLIED PHYSICS LETTERS

Segregation of In to Dislocations in InGaN

(2015) Matthew K. Horton et al.   NANO LETTERS

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

(2014) M. J. Davies et al.   APPLIED PHYSICS LETTERS

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

(2014) S. L. Rhode et al.   JOURNAL OF APPLIED PHYSICS

Bandgap energy bowing parameter of strained and relaxed InGaN layers

(2014) G. Orsal et al.   Optical Materials Express

Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

(2013) Kamal H. Baloch et al.   APPLIED PHYSICS LETTERS

Low threshold, room-temperature microdisk lasers in the blue spectral range

(2013) Igor Aharonovich et al.   APPLIED PHYSICS LETTERS

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

(2013) F. C.-P. Massabuau et al.   JOURNAL OF APPLIED PHYSICS

The dissociation of the [a + c] dislocation in GaN

(2013) P.B. Hirsch et al.   PHILOSOPHICAL MAGAZINE

Mg Doping Affects Dislocation Core Structures in GaN

(2013) S. K. Rhode et al.   PHYSICAL REVIEW LETTERS

Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates

(2013) E Taylor et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The effect of dislocations on the efficiency of InGaN/GaN solar cells

(2013) Y. Zhang et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

(2012) F. C.-P. Massabuau et al.   APPLIED PHYSICS LETTERS

Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

(2012) A. Armstrong et al.   APPLIED PHYSICS LETTERS

High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

(2011) Jochen Bruckbauer et al.   APPLIED PHYSICS LETTERS

Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection

(2011) Elison Matioli et al.   JOURNAL OF APPLIED PHYSICS

Solid-State Lighting

(2011) Colin J. Humphreys   MRS BULLETIN

Cathodoluminescence nano-characterization of semiconductors

(2011) Paul R Edwards et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Microstructural origins of localization in InGaN quantum wells

(2010) R A Oliver et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Fabrication and characterization of InGaN p-i-n homojunction solar cell

(2009) Xiao-mei Cai et al.   APPLIED PHYSICS LETTERS

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

Electron localization and emission mechanism in wurtzite (Al, In, Ga)N alloys

(2009) Qihang Liu et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

(2008) P.T. Törmä et al.   JOURNAL OF CRYSTAL GROWTH