InGaN/GaN-based green-light-emitting diodes with an inserted InGaN/GaN-graded superlattice layer

Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

(2015) Chiao-Yun Chang et al.   APPLIED PHYSICS LETTERS

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

(2014) Zi-Hui Zhang et al.   OPTICS EXPRESS

Study on carrier lifetimes in InGaN multi-quantum well with different barriers by time-resolved photoluminescence

(2014) Lai Wang et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer

(2013) Jun Hyuk Park et al.   APPLIED PHYSICS LETTERS

Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer

(2013) Junjie Kang et al.   APPLIED PHYSICS LETTERS

Investigation of large Stark shifts in InGaN/GaN multiple quantum wells

(2013) Guibao Xu et al.   JOURNAL OF APPLIED PHYSICS

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs

(2013) Chuanyu Jia et al.   OPTICS EXPRESS

InGaN light emitting diodes with a laser-treated tapered GaN structure

(2011) Wan-Chun Huang et al.   OPTICS EXPRESS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes

(2010) Chia-Lung Tsai et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

(2010) Jiaxing Wang et al.   APPLIED PHYSICS LETTERS

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

(2010) X. Ni et al.   APPLIED PHYSICS LETTERS

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

(2010) W.V. Lundin et al.   JOURNAL OF CRYSTAL GROWTH

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

(2010) V. S. Sizov et al.   SEMICONDUCTORS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Light-emitting diode development on polar and non-polar GaN substrates

(2008) C. Wetzel et al.   JOURNAL OF CRYSTAL GROWTH