Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

Published 2013 View Full Article

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Title
Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 11, Pages 1409-1411
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-09-18
DOI
10.1109/led.2013.2280017

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