Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

Threading dislocation density effect on the electrical and optical properties of InGaN light-emitting diodes

(2018) Suihu Dang et al.   OPTIK

Synthesis and characterization of a liquid Eu precursor (EuCp pm 2 ) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy

(2017) Brandon Mitchell et al.   MATERIALS CHEMISTRY AND PHYSICS

Emission enhancement and its mechanism of Eu-doped GaN by strain engineering

(2017) Tomohiro Inaba et al.   Optical Materials Express

Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission

(2017) Chang-Mo Kang et al.   Scientific Reports

Optical sites in Eu- and Mg-codoped GaN grown by NH3-source molecular beam epitaxy

(2016) Hiroto Sekiguchi et al.   APPLIED PHYSICS LETTERS

Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the 5D0 to 7F1 transition

(2016) K. P. O'Donnell et al.   APPLIED PHYSICS LETTERS

Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy

(2016) Hiroto Sekiguchi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of InGaN/GaN quantum wells with graded InGaN buffer for green-to-yellow light emitters

(2016) Chia-Hsuan Hu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

(2016) A.Y. Polyakov et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

(2016) Jun Hyuk Park et al.   JOURNAL OF APPLIED PHYSICS

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

(2016) Akihiko Yoshikawa et al.   JOURNAL OF APPLIED PHYSICS

Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

(2016) D. Nd. Faye et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

High luminous efficacy green light-emitting diodes with AlGaN cap layer

(2016) Abdullah I. Alhassan et al.   OPTICS EXPRESS

Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes

(2016) Shengjun Zhou et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

(2016) Matthias Auf der Maur et al.   PHYSICAL REVIEW LETTERS

Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications

(2016) B. Mitchell et al.   Scientific Reports

Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

(2016) Tomohiro Inaba et al.   AIP Advances

Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers

(2016) Hussein S. El-Ghoroury et al.   AIP Advances

Interpretation of europium(III) spectra

(2015) Koen Binnemans   COORDINATION CHEMISTRY REVIEWS

Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy

(2015) Takanori Arai et al.   JOURNAL OF LUMINESCENCE

Influence of the Matrix on the Red Emission in Europium Self-Activated Orthoceramics

(2015) Kisla P. F. Siqueira et al.   Journal of Physical Chemistry C

Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

(2015) Yang Jiang et al.   Scientific Reports

Highly efficient red OLEDs using DCJTB as the dopant and delayed fluorescent exciplex as the host

(2015) Bo Zhao et al.   Scientific Reports

Review of Display Technologies Focusing on Power Consumption

(2015) María Fernández et al.   Sustainability

Development of InGaN-based red LED grown on (0001) polar surface

(2014) Jong-Il Hwang et al.   Applied Physics Express

Green-Light Nanocolumn Light Emitting Diodes With Triangular-Lattice Uniform Arrays of InGaN-Based Nanocolumns

(2014) Katsumi Kishino et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy

(2014) Yasufumi Fujiwara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

(2014) S. Valdueza-Felip et al.   JOURNAL OF APPLIED PHYSICS

The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers

(2014) B. Mitchell et al.   JOURNAL OF APPLIED PHYSICS

Tenfold increase in the lifetime of blue phosphorescent organic light-emitting diodes

(2014) Yifan Zhang et al.   Nature Communications

Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

(2013) Katsumi Kishino et al.   Applied Physics Express

InGaN Light-Emitting Diodes onc-Face Sapphire Substrates in Green Gap Spectral Range

(2013) Shinji Saito et al.   Applied Physics Express

Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy

(2013) Dong-gun Lee et al.   APPLIED PHYSICS LETTERS

Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels

(2013) B. Mitchell et al.   APPLIED PHYSICS LETTERS

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

(2013) A. M. Fischer et al.   APPLIED PHYSICS LETTERS

633 nm Red Emissions from InGaN Nanocolumn Light-Emitting Diode by Radio Frequency Plasma Assisted Molecular Beam Epitaxy

(2013) Ramesh Vadivelu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN

(2013) Dong-gun Lee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites

(2013) Ryuta Wakamatsu et al.   JOURNAL OF APPLIED PHYSICS

Emission enhancement mechanism of GaN:Eu by Mg codoping

(2013) Hiroto Sekiguchi et al.   JOURNAL OF APPLIED PHYSICS

Defect roles in the excitation of Eu ions in Eu:GaN

(2013) Jonathan D. Poplawsky et al.   OPTICS EXPRESS

Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe

(2013) B. Mitchell et al.   PHYSICAL REVIEW B

Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN

(2012) Simon Ploch et al.   APPLIED PHYSICS LETTERS

Eu luminescence center created by Mg codoping in Eu-doped GaN

(2012) Dong-gun Lee et al.   APPLIED PHYSICS LETTERS

Observation and control of the surface kinetics of InGaN for the elimination of phase separation

(2012) Michael Moseley et al.   JOURNAL OF APPLIED PHYSICS

740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

(2012) Kazuhiro Ohkawa et al.   JOURNAL OF CRYSTAL GROWTH

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

(2012) Akihiro Wakahara et al.   JOURNAL OF LUMINESCENCE

Chemical degradation mechanisms of highly efficient blue phosphorescent emitters used for organic light emitting diodes

(2012) Ruben Seifert et al.   ORGANIC ELECTRONICS

Investigation of blue InGaN light-emitting diodes with step-like quantum well

(2011) Miao-Chan Tsai et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center

(2011) N. Woodward et al.   APPLIED PHYSICS LETTERS

III-Nitride full-scale high-resolution microdisplays

(2011) Jacob Day et al.   APPLIED PHYSICS LETTERS

Emission from rare-earth ions in GaN wurtzite crystals

(2011) M. M. Mezdrogina et al.   INORGANIC MATERIALS

Design strategies for mitigating the influence of polarization effects on GaN-based multiple quantum well light-emitting diodes

(2011) H. M. Lu et al.   JOURNAL OF APPLIED PHYSICS

Dislocation structure of GaN films grown on planar and nano-patterned sapphire

(2011) Wanjun Cao et al.   JOURNAL OF APPLIED PHYSICS

On the formation of vacancy defects in III-nitride semiconductors

(2011) F. Tuomisto et al.   JOURNAL OF CRYSTAL GROWTH

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

(2010) Shuichiro Yamamoto et al.   Applied Physics Express

True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

(2010) Adrian Avramescu et al.   Applied Physics Express

Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

(2010) A. Nishikawa et al.   APPLIED PHYSICS LETTERS

Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

(2010) Chih-Teng Liao et al.   JOURNAL OF APPLIED PHYSICS

Optical gain characteristics of staggered InGaN quantum wells lasers

(2010) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers

(2010) N. Woodward et al.   OPTICAL MATERIALS

Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy

(2010) A. Nishikawa et al.   OPTICAL MATERIALS

Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate

(2010) Seoung-Hwan Park et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Optical gain of the1.54 μmemission in MBE-grown Si:Er nanolayers

(2010) N. N. Ha et al.   PHYSICAL REVIEW B

Luminescence and energy-transfer mechanisms inEu3+-doped GaN epitaxial films

(2010) Shinya Higuchi et al.   PHYSICAL REVIEW B

Identification of the prime optical center inGaN:Eu3+

(2010) I. S. Roqan et al.   PHYSICAL REVIEW B

Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy

(2009) Z. Fleischman et al.   APPLIED PHYSICS B-LASERS AND OPTICS

Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

(2009) Atsushi Nishikawa et al.   Applied Physics Express

Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

(2009) Hongping Zhao et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

(2009) H.P. Zhao et al.   IET Optoelectronics

Structural and optical characterization of Eu-implanted GaN

(2009) K Lorenz et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes

(2009) Seoung-Hwan Park et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Identification of the gallium vacancy–oxygen pair defect in GaN

(2009) N. T. Son et al.   PHYSICAL REVIEW B

Improvement in piezoelectric effect of violet InGaN laser diodes

(2008) Sheng-Horng Yen et al.   OPTICS COMMUNICATIONS

Two colour experiments in Eu3+ implanted GaN

(2007) L. Bodiou et al.   JOURNAL OF ALLOYS AND COMPOUNDS