Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs

Design strategies for mitigating the influence of polarization effects on GaN-based multiple quantum well light-emitting diodes

(2011) H. M. Lu et al.   JOURNAL OF APPLIED PHYSICS

Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods

(2011) Q Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Improvement of Light Intensity for Nitride-Based Multi-Quantum Well Light Emitting Diodes by Stepwise-Stage Electron Emitting Layer

(2010) Shyh-Jer Huang et al.   Applied Physics Express

Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer

(2010) Chung-Hsun Jang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

(2010) V. Ramesh et al.   JOURNAL OF APPLIED PHYSICS

Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

(2010) Ray-Ming Lin et al.   MICROELECTRONICS RELIABILITY

The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers

(2008) Shi Jong Leem et al.   JOURNAL OF CRYSTAL GROWTH