Effects of Film Thickness and Ar/O2Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories

Title
Effects of Film Thickness and Ar/O2Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories
Authors
Keywords
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Journal
CHINESE PHYSICS LETTERS
Volume 32, Issue 1, Pages 016801
Publisher
IOP Publishing
Online
2015-01-14
DOI
10.1088/0256-307x/32/1/016801

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