Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

(2017) Anwar Manzoor Rana et al.   Scientific Reports

Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant

(2016) M. Ismail et al.   ACS Applied Materials & Interfaces

3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices

(2016) W. Kim et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe0.5Cr0.5O3−d films

(2016) Xianjie Wang et al.   Scientific Reports

Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices

(2015) Hua-Qiang Wu et al.   Chinese Physics B

Effects of Film Thickness and Ar/O2Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories

(2015) Ting-Ting Guo et al.   CHINESE PHYSICS LETTERS

Role of tantalum nitride as active top electrode in electroforming-free bipolar resistive switching behavior of cerium oxide-based memory cells

(2015) Muhammad Ismail et al.   THIN SOLID FILMS

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

Forming-free bipolar resistive switching in nonstoichiometric ceria films

(2014) Muhammad Ismail et al.   Nanoscale Research Letters

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Forming free resistive switching in graphene oxide thin film for thermally stable nonvolatile memory applications

(2013) Geetika Khurana et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films

(2012) Myung Soo Lee et al.   APPLIED PHYSICS LETTERS

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching

(2011) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application

(2011) Sheng-Yu Wang et al.   MICROELECTRONIC ENGINEERING

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Comprehensive Study of the Resistive Switching Mechanism in $\hbox{Al/TiO}_{x}/\hbox{TiO}_{2}/\hbox{Al}$-Structured RRAM

(2009) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today