Effect of interface roughness on Auger recombination in semiconductor quantum wells

Electrons and holes get closer

(2015) Chee-Keong Tan et al.   Nature Nanotechnology

Thickness Variations and Absence of Lateral Compositional Fluctuations in Aberration-Corrected STEM Images of InGaN LED Active Regions at Low Dose

(2014) Andrew B. Yankovich et al.   MICROSCOPY AND MICROANALYSIS

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

(2013) Steven P. DenBaars et al.   ACTA MATERIALIA

Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study

(2013) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes

(2013) R. Vaxenburg et al.   APPLIED PHYSICS LETTERS

Semipolar $({\hbox{20}}\bar\hbox{2\bar\hbox{1)$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

(2013) Daniel F. Feezell et al.   Journal of Display Technology

Composition Fluctuation of In and Well-Width Fluctuation in InGaN/GaN Multiple Quantum Wells in Light-Emitting Diode Devices

(2013) Gil Ho Gu et al.   MICROSCOPY AND MICROANALYSIS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Analysis of Auger Recombination for Wurtzite InGaN

(2012) Gen-ichi Hatakoshi et al.   Applied Physics Express

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

(2012) Yuh-Renn Wu et al.   APPLIED PHYSICS LETTERS

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

(2012) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Numerical analysis of indirect Auger transitions in InGaN

(2012) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells

(2012) S.R. Lee et al.   JOURNAL OF CRYSTAL GROWTH

III-Nitride Photonics

(2012) Nelson Tansu et al.   IEEE Photonics Journal

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios

(2011) Xiao-Hang Li et al.   IEEE Photonics Journal

A numerical study of Auger recombination in bulk InGaN

(2010) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

(2010) W. W. Chow et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS